Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1994-10-03
1996-06-11
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257712, 423446, 428212, 428408, H01L 310312, H01L 2334
Patent
active
055258158
ABSTRACT:
A continuous diamond structure deposited by chemical vapor deposition is disclosed having at least two thermal conductivity diamond layers controlled by the diamond growth rate where one thermal conductivity diamond layer is grown at a high growth rate of at least one micron per hour for hot filament chemical vapor deposition and at least 2-3 microns per hour for microwave plasma assisted chemical vapor deposition, on a substrate such as molybdenum in a chemical vapor deposition chamber and at a substrate temperature that promotes the high growth rate, and the other thermal conductivity diamond layer is grown at a growth rate and substrate temperature lower than the high growth rate diamond layer. High growth rate and low growth rate diamond layers can be deposited in any sequence to obtain a continuous diamond structure that does not show distinguishable, separate, crystalline columnar layers, having improved thermal conductivity.
REFERENCES:
patent: 5126206 (1992-06-01), Garg et al.
patent: 5147687 (1992-09-01), Garg et al.
patent: 5273731 (1993-12-01), Anthony et al.
patent: 5310596 (1994-05-01), Bigelow et al.
J. Doting, Isotherms In Diamond Heat Sinks, Non-Linear Heat Transfer In An Excellent Heat Conductor, CH2530-4/88/0000-0113 (1988) IEEE, pp. 113-117.
G. K. Reeves, et al., Temperature Districution in GaAs Lasers with Diamond Film Heatsink, Electronics Letters, vol. 28, No. 25, (Dec. 3, 1992) pp. 2317-2318.
M. Seal, Thermal and Optical Applications of Thin Film Diamond, Phil. Trans. R. Soc. Lond. A (1993) 342, pp. 313-321.
General Electric Company
Johnson Noreen C.
Loke Steven H.
Pittman William H.
LandOfFree
Diamond film structure with high thermal conductivity does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Diamond film structure with high thermal conductivity, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Diamond film structure with high thermal conductivity will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-353653