Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Using an energy beam or field – a particle beam or field – or...
Patent
1993-10-27
1997-04-15
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
Using an energy beam or field, a particle beam or field, or...
117109, 117929, 423445B, 423446, C30B 2904
Patent
active
056205120
ABSTRACT:
A method and system for manufacturing diamond film. The method involves forming a fullerene vapor, providing a noble gas stream and combining the gas with the fullerene vapor, passing the combined fullerene vapor and noble gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the fullerene and deposition of a diamond film on a substrate.
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Gruen Dieter M.
Krauss Alan R.
Liu Shengzhong
Pan Xianzheng
Kunemund Robert
University of Chicago
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