Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1995-04-04
1998-12-15
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
417108, 417929, 427577, 427575, 423446, C30B 2904
Patent
active
058490795
ABSTRACT:
A method and system for manufacturing diamond film. The method involves forming a carbonaceous vapor, providing a gas stream of argon, hydrogen and hydrocarbon and combining the gas with the carbonaceous vapor, passing the combined carbonaceous vapor and gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the carbonaceous and deposition of a diamond film on a substrate.
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Gruen Dieter M.
Krauss Alan R.
Liu Shengzhong
Pan Xianzheng
Zuiker Christopher D.
Kunemund Robert
The University of Chicago
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