Semiconductor device manufacturing: process – Having diamond semiconductor component
Reexamination Certificate
2007-02-13
2010-12-07
Kebede, Brook (Department: 2894)
Semiconductor device manufacturing: process
Having diamond semiconductor component
C438S758000, C427S249700, C427S249800
Reexamination Certificate
active
07846766
ABSTRACT:
A diamond film formation method includes forming, in a composite of a metal material and a semiconductor material, diamond nuclei on a surface of the metal material at a temperature below 650° C. in a first mixed gas containing at least carbon and hydrogen, and growing the diamond nuclei formed in the composite at a temperature below 750° C. in a second mixed gas containing at least carbon and hydrogen to form a diamond film.
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Ono Tomio
Sakai Tadashi
Sakuma Naoshi
Suzuki Mariko
Yanase Isamu
Kabushiki Kaisha Toshiba
Kebede Brook
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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