Diamond film formation method and film formation jig thereof

Semiconductor device manufacturing: process – Having diamond semiconductor component

Reexamination Certificate

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C438S758000, C427S249700, C427S249800

Reexamination Certificate

active

07846766

ABSTRACT:
A diamond film formation method includes forming, in a composite of a metal material and a semiconductor material, diamond nuclei on a surface of the metal material at a temperature below 650° C. in a first mixed gas containing at least carbon and hydrogen, and growing the diamond nuclei formed in the composite at a temperature below 750° C. in a second mixed gas containing at least carbon and hydrogen to form a diamond film.

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patent: 2006-56744 (2006-03-01), None

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