Diamond film field effect transistor with self aligned source an

Details Diamond film field effect transistor with self aligned source an Diamond film field effect transistor with self aligned source an

1994-07-06

1996-06-04

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257280, 257613, H01L 310312, H01L 2980, H01L 2912

Patent

active

055235883

ABSTRACT:
A diamond film field effect transistor, excellent in characteristics and a method of manufacturing the transistor, in which a contact resistance between electrodes and respective source and drain region is small. The transistor has a channel layer of a p-layer made of semiconducting diamond, an i-layer made of high resistance diamond as a gate insulating layer, which is formed on the channel layer, a gate electrode film formed on the i-layer and a source region and a drain region formed on the surface of the i-layer in self-alignment to the gate electrode film by ion implantation using the gate electrode film, side walls and a protective film as masks.

REFERENCES:
patent: 5107315 (1992-04-01), Kumagai et al.
patent: 5114871 (1992-05-01), Jones
patent: 5298765 (1994-03-01), Nishimura

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