Diamond film electronic devices

Details Diamond film electronic devices Diamond film electronic devices

1994-07-25

1995-07-11

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257 76, 338 22R, H01L 4900

Patent

active

054323576

ABSTRACT:
A pair of electrodes 3 are first formed on a substrate. Subsequently, an undoped diamond film is selectively deposited between the above electrodes. A B-doped diamond film is then selectively formed on both the insulating diamond film and part of each electrode. The substrate may be contained in a container provided with an opening portion from which only the B-doped diamond film is exposed.

REFERENCES:
patent: 3986196 (1976-10-01), Decker et al.
patent: 4359372 (1982-11-01), Nagai et al.
patent: 5066938 (1991-11-01), Kobashi et al.
patent: 5081438 (1992-01-01), Nakahata et al.
patent: 5099296 (1992-03-01), Mort et al.
patent: 5254862 (1993-10-01), Kalyankjumar et al.
patent: 5287003 (1994-02-01), Van Andel et al.

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