Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1992-08-28
1995-06-27
Beck, Shrive
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 90, 117929, 427249, 264 81, C30B 2502, C30B 2518, C30B 2522
Patent
active
054270537
ABSTRACT:
A method for making a quasi-single crystal diamond is provided. Small diamond granules, like islands, are epitaxially grown on a single crystal substrate having a lattice constant which is similar to that of diamond. A deposition layer is formed on the island diamond granules. The initial substrate is eliminated. Diamond is grown on the deposition layer having diamond granules to make a diamond film having a certain thickness. The initially-grown diamond granules which have the same crystallographical direction align the direction of crystals of the latter-grown diamond by playing a role of seed crystals.
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Suzuki et al, "Expitaxial Growth of Diamond on C-BN Surface", The Third Diamond Symposium 1989, no month available.
M. Fujita et al, "Expitaxial Growth of Diamond on Nickel Substrate", The Fourth Diamond Symposium 1991, no month available.
Chang et al, "Diamond crystal growth by plasma chemical vapor deposition", Journal of Applied Physics, vol. 63, No. 5, Mar. 1988, pp. 1744-1748.
Koizumi et al, "Epitaxial growth of diamond thin films on cubic boron nitride (111) surfaces by dc plasma chemical vapor deposition", Applied Physics Letters, vol. 57, No. 6, Aug. 1990, pp. 563-565.
Fujimoro Naoji
Tsuno Takashi
Beck Shrive
Chen Bret
Sumitomo Electric Industries Ltd.
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