Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1998-05-14
1999-11-23
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257382, 257383, 257384, 257607, 257763, 257764, H01L 310312, H01L 2976, H01L 2994, H01L 31062
Patent
active
059904933
ABSTRACT:
A method if provided for forming a diamond etch stop layer across a transistor to protect the source and drain junctions and the gate conductor of the transistor from being etched. The diamond may be CVD deposited from a hydrocarbon-bearing gas across the transistor. An interlevel dielectric comprising oxide is formed across the diamond etch stop layer. Contact openings may be etched through the oxide interlevel dielectric to the source and drain junctions and the gate conductor using a fluorine-bearing plasma. Advantageously, a high etch rate selectivity of oxide to diamond may be achieved using the fluorine-bearing plasma. As such, the plasma etch may be terminated well before significant portions of the diamond can be removed. Ti atoms may be implanted into regions of the diamond exposed by the contact openings and subsequently heated to render those regions of the diamond conductive. Contacts may be formed within the contact openings upon the conductive diamond which are electrically linked to the source and drain junctions and the gate conductor.
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Gardner Mark I.
Gilmer Mark C.
Advanced Micro Devices , Inc.
Daffer Kevin L.
Ngo Ngan V.
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