Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1995-06-06
1997-05-27
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 95, 117913, 117929, C30B 2904
Patent
active
056328125
ABSTRACT:
A diamond electronic device constituted of a diamond crystal formed on a substrate comprises a diamond crystal having the ratio (h/L) of length (h) of the diamond crystal in direction substantially perpendicular to the face of the substrate to length (L) of the diamond crystal in direction parallel to the face of the substrate ranging from 1/4 to 1/1000 and an upper face of the diamond crystal making an angle of from substantially 0.degree. to 10.degree. to the face of the substrate, and a semiconductor layer and an electrode layer provided on the diamond crystal, wherein the diamond crystal serves as a heat-radiating layer.
REFERENCES:
patent: 5197651 (1993-03-01), Nakamura et al.
patent: 5260141 (1993-11-01), Tsai et al.
patent: 5306928 (1994-04-01), Kimoto et al.
Canon Kabushiki Kaisha
Kunemund Robert
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