Diamond doping

Details Diamond doping Diamond doping

1995-03-20

1997-03-11

Padgett, Marianne

Coating processes

Direct application of electrical, magnetic, wave, or...

Ion plating or implantation

427531, 427113, 423446, 437173, C23C 1400, B05D 512, H01L 21265, B01J 306

Patent

active

056099266

ABSTRACT:
A method of doping diamond with relatively large atoms such as aluminium, phosphorus, arsenic and antimony is provided. The method involves implanting the dopant atoms at a low temperature to create a damaged region of point defects in the form of vacancies and interstitial dopant atoms within the crystal lattice of the diamond, and annealing the diamond to reduce the lattice damage and cause dopant interstitial atoms to diffuse into lattice positions. The implantation dose will be low and such as to create density of implanted dopant atoms of no greater than 2.5.times.10.sup.18 cm.sup.3.

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patent: 4976987 (1990-12-01), Musket et al.
patent: 5034784 (1991-07-01), Yamazaki
patent: 5075764 (1991-12-01), Yamazaki
patent: 5252498 (1993-10-01), Yamazaki
patent: 5328855 (1994-07-01), Kitabatake et al.
patent: 5385762 (1995-01-01), Prins

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