Diamond crystal

Stock material or miscellaneous articles – Self-sustaining carbon mass or layer with impregnant or...

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428457, 428469, C30B 2904

Patent

active

057925569

ABSTRACT:
There is provided a diamond crystal in which the (111) oriented plane is of the diamond crystal synthesized on a substrate by a chemical vapor deposition method parallel to a substrate surface, and the area of the (111) oriented plane parallel to the substrate surface is 1/24 or less an area of the crystal on the substrate.

REFERENCES:
patent: 5082359 (1992-01-01), Kirkpatrick
patent: 5298286 (1994-03-01), Yang et al.
Gas Flow Effects in Synthesis of Diamond By Hot-Filament Chemical Vapor Deposition, Singh, J. Vellaikal M., and Dat, R., pp. 133-140, 1994.
Heteroepitazially Grown Diamond on a c-BN (111) Surface, Wang, L., Pirouz, P., pp. 1336-1338, 1993.
Oriented Nucleation of Diamond Films on Nickel Substrates, Yang, P., Zhu, W., Glass, J.T., pp. 677-678, 1993.
Belton et al. "Nucleation of chemically vapor deposited diamond on platinum and nickel substrates" 2194 Thin Solid Films 212 (1992) May 15, No. 1/2 68-80.
Narayan et al. "Enhancement of nucleation and adhesion of diamond films on copper, stainless steel and silicon substrates," 931 Journal of Applied Physics 71 (1992) 15 Jan., No. 2 pp. 966-971.

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