Diamond covered member and process for producing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide

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Details

257627, 427314, 427590, H01L 29161, H01L 2920, B05D 306

Patent

active

054830842

ABSTRACT:
A diamond covered member is provided which has a diamond crystal layer formed by vapor phase synthesis on a surface of a substrate, the diamond crystal layer being constituted of plate-shaped diamond crystals at least at an initial stage of crystal growth, and being a polycrystal film formed by growth and coalescence of the plate-shaped diamond crystals, and the polycrystal film being uniformly oriented and having surface roughness (Rmax) of not larger than 0.2 .mu.m. A process for producing the diamond covered member is also provided. The diamond covered member has high hardness, high thermal conductivity, and high chemical stability.

REFERENCES:
patent: 5186973 (1993-02-01), Garg et al.
patent: 5197651 (1993-03-01), Nakamura et al.
patent: 5240749 (1993-08-01), Chow
J. Appl. Phys. (USA), Journal of Applied Physics, 1 May 1991, USA, 69, 9, 6456-6460 ISSN 0021-8979; DeNatale J. F. et al. "Microstructure and orientation effects in diamond thin films".
Appl. Phys. Lett. (USA), Applied Physics Letters, 25 Jan. 1993, USA, 62, 4, 354-356 ISSN 0003-6951, Hirabayashi, K. et al. `Morphology of flattened diamond crystals synthesized by the oxy-acetylene flame method`.
J. Appl. Phys. (USA), Journal of Applied Physics, 1 Nov. 1992, USA, 72, 9, 4083-4087 ISSN 0021-8979 Hirabayashi, K. "Surface microstructures of diamond crystals synthesized in the H/sub 2/-CH/sub 4/0/sub 2/system".
Journal of Materials Research, Nov. 1992, USA, 7, 11, 3001-3009 ISSN 0884-2914 Angus J. C. et al. `Twinning and faceting in early stages of diamond growth by chemical vapor deposition`.

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