Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Patent
1992-01-22
1997-09-23
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
257 77, H01L 2906, H01L 2912
Patent
active
056707886
ABSTRACT:
A cold cathode device is provided comprising a wide-bandgap (>5 eV) material exhibiting negative electron affinities, low trap densities, and high carrier mobilities, a junction between a first region of the wide-bandgap material having n-type conductivity and a second region of the wide-bandgap material having p-type conductivity, and a conductive contact to forward bias the junction causing electrons to be emitted near the junction into an exterior region.
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Geis et al., Diamond Cold Cathode, Aug. 1991, IEEE Electron Device Letters, vol. 12 No. 8.
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Geis, Smith, Argoitia, Angus, Ma, Glass, Butler, Robinson and Pryor, "Large-area mosaic diamond films approaching single-crystal quality," Appl. Phys. Lett. 58 (22), 3 Jun. 1991, pp. 2485-2487.
Crane Sara W.
Massachusetts Institute of Technology
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