Diamond bodies grown on SiC substrates and associated methods

Details Diamond bodies grown on SiC substrates and associated methods Diamond bodies grown on SiC substrates and associated methods

2006-04-18

2008-10-14

Hiteshew, Felisa C (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having growth from a solution comprising a solvent which is...

C117S068000, C117S075000, C423S446000

Reexamination Certificate

active

07435296

ABSTRACT:
The present invention provides methods of forming high quality diamond bodies under high pressure, and the diamond bodies produced by such methods. In one aspect, a method is provided for growing a diamond body, including providing a non-particulate silicon carbide (SiC) mass having a pre-designed shape, placing the SiC mass under high pressure in association with a molten catalyst and a carbon source, and maintaining the SiC mass under high pressure to form a substantially monocrystalline diamond body. The diamond body may be formed across substantially all of the SiC mass having surface area exposed to the molten catalyst. As such, the diamond body may conform to the shape of the exposed surface area of the SiC mass.

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