Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than...
Patent
1993-07-08
1994-11-08
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
257 77, 257414, 204410, 204411, 204412, 204424, 422 90, H01L 2966
Patent
active
053629752
ABSTRACT:
A chemical sensor includes a diode or a transistor fabricated in diamond. A diamond-based diode chemical sensor includes a first diamond layer of first conductivity type and a second diamond or non-diamond layer of second conductivity type. A relatively highly doped region is formed in the first diamond layer, adjacent an electrical contact to reduce the frequency dependance of the sensor's capacitance/voltage characteristic. A diamond-based transistor sensor includes a controlling electrode such as a gate which is configured to allow a chemical external to the transistor to alter the characteristics of the transistor. Relatively highly doped regions are formed adjacent the transistor's controlling electrodes, such as the source and drain. A heater is thermally coupled to the sensor for heating the sensor to a predetermined operating temperature. A temperature monitor is also coupled to the sensor for monitoring the sensor temperature.
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Venkatesan Vasudev
von Windheim Jesko
Kobe Steel USA
Mintel William
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