Diamond and silicon carbide heterojunction bipolar transistor

Details Diamond and silicon carbide heterojunction bipolar transistor Diamond and silicon carbide heterojunction bipolar transistor

1992-12-02

1994-02-08

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257198, 257 77, 257 51, 257613, H01L 31072, H01L 31109, H01L 2904, H01L 2912

Patent

active

052850897

ABSTRACT:
A double heterojunction bipolar transistor includes diamond as the semiconductor material for the collector and emitter, while silicon carbide provides the base. Accordingly, the diamond is readily and reproducibly p-doped, and the silicon carbide may be fabricated by a solid state reaction to form an n-type intrinsic semiconductor. The base is preferably not so thick as to greatly increase transit time, yet sufficiently thick to prevent tunneling. In one embodiment single crystal diamond and single crystal silicon carbide are used in direct contact with each other. In another embodiment of the transistor, polycrystalline diamond is used, and a layer of insulating diamond is positioned between each face of the silicon carbide layer and the diamond layers. A method for fabricating the transistor includes depositing silicon on the diamond and annealing same so as to produce silicon carbide by a solid state reaction. The silicon carbide so produced is intrinsically n-type. Alternately, the silicon carbide may be directly deposited.

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patent: 5173761 (1992-12-01), Dreifus et al.
Prins, "Bipolar Transistor Action in Ion Implanted Diamond", Appl. Phys. Lett. 41(10), Nov. 15, 1982, pp. 950-952.
Stoner et al, "Textured Diamond Growth on (100) .beta.-SiC via Microwave Plasma Chemical Vapor Deposition", Appl. Phys. Lett. 60(6), Feb. 10, 1992, pp. 698-700.
Kawarada et al., "Large Area Chemical Vapor Deposition of Diamond Particles and Films Using Magneto-Microwave Plasma", vol. 26, No. 6, Jun. 1987, pp. L1032-L1034.

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