Chemistry of inorganic compounds – Carbon or compound thereof – Elemental carbon
Patent
1992-05-18
1993-12-14
Kunemund, Robert
Chemistry of inorganic compounds
Carbon or compound thereof
Elemental carbon
427577, 156DIG68, C01B 3106
Patent
active
052700283
ABSTRACT:
A diamond having improved properties is produced by a method which comprises introducing a mixture of hydrogen (A), an inert gas (B) and a carbon-containing compound (C) in molar ratios which satisfy the following equations: ##EQU1## generating a low temperature plasma with one of direct current and an alternating current electromagnetic field under pressure of 5 to 760 Torr to form the diamond on a substrate, wherein there is no substantial differnce between a place where the plasma is generated and a place where the diamond is formed on the substrate.
REFERENCES:
patent: 3630677 (1971-12-01), Angus
patent: 3749760 (1973-07-01), Deryagin
patent: 3961103 (1976-06-01), Aisenberg
patent: 4434188 (1984-02-01), Kamo et al.
patent: 4767608 (1988-08-01), Matsumoto et al.
Tobioka, "Patent Abstracts of Japan", Jan. 13, 1988, vol. 12, No. 11, JP-A-62 164 878.
Fujii, "Patent Abstracts of Japan", Feb. 13, 1986, vol. 10, No. 36, JP-A-60 186 500.
"Chemical Abstracts", Apr. 1981, p. 149, Abstract No. 124025x.
Kikuchi, "Patent Abstracts of Japan", Feb. 20, 1989, vol. 10, No. 43, JP-A-60 191 097.
Hirose and Terasawa, "Japanese Journal of Applied Physics", Synthesis of Diamond Thin Films by Thermal CVD Using Organic Compounds, Jun. 1986, p. L519, Table 1, vol. 25, No. 6, Part II.
Fujimori Naoji
Imai Takahiro
Tanabe Keiichiro
Kunemund Robert
Sumitomo Electric Industries Ltd.
LandOfFree
Diamond and its preparation by chemical vapor deposition method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Diamond and its preparation by chemical vapor deposition method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Diamond and its preparation by chemical vapor deposition method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1703225