DFB laser assembly and laser module

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure

Reexamination Certificate

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C257S094000

Reexamination Certificate

active

07453100

ABSTRACT:
A DFB laser assembly including both a DFB laser device, with a buried heterostructure having a cavity length of 400 μm, a differential resistance of 4Ω, an emission wavelength of 1550 nm, and a thermal resistance of 50K/watt or less, and a heat sink mounting the DFB laser device in a junction-down structure so that the DFB laser device has a wavelength/current coefficient at 5 picometers/milli-ampere or less.

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