Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2002-08-27
2008-11-18
Picardat, Kevin M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S094000
Reexamination Certificate
active
07453100
ABSTRACT:
A DFB laser assembly including both a DFB laser device, with a buried heterostructure having a cavity length of 400 μm, a differential resistance of 4Ω, an emission wavelength of 1550 nm, and a thermal resistance of 50K/watt or less, and a heat sink mounting the DFB laser device in a junction-down structure so that the DFB laser device has a wavelength/current coefficient at 5 picometers/milli-ampere or less.
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Funabashi Masaki
Kasukawa Akihiko
Yatsu Ryosuke
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Picardat Kevin M
The Furukawa Electric Co. Ltd.
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