Devices with Schottky metal contacts filling a depression in a s

Details Devices with Schottky metal contacts filling a depression in a s Devices with Schottky metal contacts filling a depression in a s

1978-05-30

1980-05-06

Clawson, Jr., Joseph E.

357 52, 357 55, H01L 2948

Patent

active

042019982

ABSTRACT:
A Schottky barrier semiconductor device and process for making same is described wherein edge breakdown is avoided by making the rectifying contact in a curved depression in an epitaxial active layer having a nonuniform doping profile. The depression is formed by anodizing a portion of the epitaxial layer and etching the anodic oxide. Etching and electroplating of the contact are done in the same solution to avoid contamination of the metal-semiconductor interface.

REFERENCES:
patent: 2846346 (1958-08-01), Bradley
patent: 3397450 (1968-08-01), Bittmann et al.
patent: 3476984 (1969-11-01), Tibol
patent: 3623925 (1971-11-01), Jenkins et al.
patent: 3636417 (1972-01-01), Kimura
patent: 4075652 (1978-02-01), Umebachi et al.
R. Warner et al., "Integrated Circuits-Design Prin. and Fab.," McGraw-Hill, 1965, Motorola, TK7870M63, p. 73.
P. Stiles et al., "Schottky Barrier Diode," IBM Tech. Discl. Bull., vol. 11, #1, Jun. 1968, p. 20.
S. Magdo et al., "High-Speed Epitaxial Field-Effect Devices," IBM Tech. Discl. Bull., vol. 14, #3, Aug. 1971, p. 751.

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