Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With means to increase current gain or operating frequency
Reexamination Certificate
2005-12-27
2005-12-27
Loke, Steven (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With means to increase current gain or operating frequency
C257S344000, C257S345000, C257S565000, C257S592000
Reexamination Certificate
active
06979885
ABSTRACT:
In a semiconductor substrate with a top surface, a PN junction between a first region of one conductivity type formed by masked diffusion into a semiconductor from the surface and a second region of opposite conductivity type formed into a first portion of the first region from the surface. The improvement comprising edges of the first region being spaced from associated edges of the second region such that the doping concentration of the first region at the surface intersection of corners of the junction between the first and second regions is lower than it is at some other location in the first region.
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Intersil America's Inc.
Loke Steven
Lundberg Scott V.
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