Devices with optical gain in silicon

Details Devices with optical gain in silicon Devices with optical gain in silicon

2006-04-04

2006-04-04

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S021000, C257S017000, C257S018000

Reexamination Certificate

active

07023011

ABSTRACT:
A photonic device includes a silicon semiconductor based superlattice. The superlattice has a plurality of layers that form a plurality of repeating units. At least one of the layers in the repeating unit is an optically active layer with at least one species of rare earth ion.

REFERENCES:
patent: 5654814 (1997-08-01), Ouchi et al.
patent: 6208681 (2001-03-01), Thornton
patent: 6222951 (2001-04-01), Huang
Shin et al, Applied Physics Letters, vol. 74 No. 11, Mar. 5, 1999, “1.54 um Er3+ . . . superlattices” pp. 1573-1575.

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