Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2011-04-19
2011-04-19
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S686000, C257S723000, C257S777000
Reexamination Certificate
active
07928579
ABSTRACT:
Methods for forming vias are disclosed. The methods include providing a substrate having a first surface and an opposing, second surface. The vias are formed within the substrate to have a longitudinal axis sloped at an angle with respect to a reference line extending perpendicular to the first surface and the second surface of the substrate. The vias may be formed from the first surface to the opposing second surface, or the via may be formed as a first blind opening from the first surface, then a second opening may be formed from the second surface to be aligned with the first opening. Vias may be formed completely through a first substrate and a second substrate, and the substrates may be bonded together. Semiconductor devices including the vias of the present invention are also disclosed. A method of forming spring-like contacts is also disclosed.
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Linder et al., Nanosprings—New Dimensions in Sputtering, Advanced Packaging, pp. 44-47, Jul. 2002.
Ahmad Syed S.
Wark James M.
Micro)n Technology, Inc.
Perkins Pamela E
Smith Zandra
TraskBritt
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