Devices having tantalum silicide structures

Details Devices having tantalum silicide structures Devices having tantalum silicide structures

1987-07-27

1990-06-26

Wojciechowicz, Edward J.

357 55, 357 59, 357 71, 357 67, H01L 2978

Patent

active

049376438

ABSTRACT:
A method for fabricating a device which includes a tantalum silicide structure, and which is essentially free of conductive etch residues, is disclosed. The method includes the steps of depositing tantalum and silicon onto a substrate, patterning the tantalum and silicon, and then sintering the patterned tantalum and silicon to form a patterned layer of tantalum silicide.

REFERENCES:
patent: 4488166 (1984-12-01), Lehrer
Leung et al.--IEEE-IEDM Tech. Dig.--1980, "Refractory Metal Silicide/N+ Polysilicon in CMOS/SOS".

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