Devices having repetitive layers

Details Devices having repetitive layers Devices having repetitive layers

1991-09-30

1993-07-06

Scott, Jr., Leon

Coherent light generators

Particular resonant cavity

Specified cavity component

372 96, 372 50, 385 14, H01S 308

Patent

active

052260550

ABSTRACT:
It has been found that in the preparation of devices having repetitive layers, such as distributed Bragg reflectors, the dopant introduced during processing redistributes itself in a deleterious manner. In particular, this dopant through various effects segregates and diffuses from one layer into the interface region of the second layer. As a result, properties such as electrical resistance of the structure become unacceptably high. By utilizing various expedients such as carbon doping this segregation and its associated deleterious effects are avoided.

REFERENCES:
patent: 5103494 (1992-04-01), Mozer
Tai et al., "Drastic Reduction of Series Resistance in Doped Semiconductor Distributed Bragg Reflectors for Surface-Emitting Lasers", Appl. Phys. Lett. 56(25) Jun. 18, 1990.
"Carbon Incorporation in (AlGa)As, (AlIn)As and (GaIn)As Ternary Alloys Grown by Molecular Beam Epitaxy", I. Hiroshi and T. Ishibashi, Japanese Journal of Applied Physics, 30(6A), Jun., 1991, pp. L944-L947.
"Carbon doping in molecular beam epitaxy of GaAs from a heated graphite filament", R. J. Malik, R. N. Nottenberg, E. F. Schubert, J. F. Walker and R. W. Ryan, Appl. Phys. Lett., 53(26), 26 Dec. 1988, p. 2661.

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