1989-04-21
1990-11-27
Hille, Rolf
357 19, 357 16, 357 4, 357 57, H01L 2714, H01L 3112, H01L 2966, H01L 2712
Patent
active
049740440
ABSTRACT:
The use of alternating n and p type regions asymmetrically spaced in a semiconductor material yields extremely advantageous properties. In particular, by controlling the doping level and the spatial configuration of the doped region both the device response and its optical properties are controllable. Therefore, in applications such as those involving optical switches LEDs, lasers and long wavelength detectors, both the speed of device and its optical properties are controllable. As a result, greater fabrication flexibility than previously available is possible.
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The Physics of Semiconductor Devices, 2nd Edition, S. M. Sze, Chapter 1, John Wiley & Sons, New York, 1981.
Advanced Crystal Growth, P. M. Dryburgh, B. Cockayne, K. G. Barraclough, eds, Prentice Hall, London, 1987, Part IV.
Cunningham John E.
Glass Alastair M.
Schubert Erdmann F.
AT&T Bell Laboratories
Hille Rolf
Potter Roy
Schneider Bruce S.
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