1990-06-13
1991-07-09
Mintel, William
357 4, 357 58, 357 63, 357 17, 357 19, H01L 2714
Patent
active
050310127
ABSTRACT:
The use of alternating n and p type regions asymmetrically spaced in a semiconductor material yields extremely advantageous properties. In particular, by controlling the doping level and the spatial configuration of the doped region both the device response and its optical properties are controllable. Therefore, in applications such as those involving optical switches LEDs, lasers and long wavelength detectors, both the speed of device and its optical properties are controllable. As a result, greater fabrication flexibility than previously available is possible.
REFERENCES:
patent: 4620206 (1986-10-01), Ohta et al.
patent: 4772934 (1988-09-01), Cunningham et al.
patent: 4879581 (1989-11-01), Diamond
Chin et al., "Impact Ionization in Multilayered Heterojunction Structures", Electronics Letters, Jun. 5, 1980, vol. 16, No. 12, pp. 467-468.
Wood et al., "Complex Free-Carrier Profile Synthesis by `Atomic-Plane` Doping of MBE GaAs", J. Appl. Phys., 51(1), Jan. 1980, pp. 383-387.
Dohler, "Doping Superlattices", J. Vac. Sci. Technol., 16(3), May/Jun. 1979, pp. 851-856.
Cunningham John E.
Glass Alastair M.
Schubert Erdmann F.
AT&T Bell Laboratories
Mintel William
Schneider B. S.
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