Devices for detecting and/or imaging single photoelectron

Electric lamp and discharge devices – With temperature modifier – For lead-in-seal or stem protection

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357 13, 357 30, 357 17, 313366, 313373, 313354, 315 3, H01L 3112, H01L 2990, H01L 2714

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active

051462966

ABSTRACT:
A wafer of neutron transmutation doped silicon having a p-n junction between extended opposite surfaces is formed with bevelled edges. A single or plurality of reverse biased signal contacts is disposed on one surface to provide a single or integrated array of avalanche photodiodes. In addition, an avalanche photodetector (APD) capable of detecting a single photoelectron or imaging multiple photoelectrons comprises a light sensitive photocathode, similar to that in a photomultiplier tube, acting as a converter to produce photoelectrons, which are then accelerated to an anode. The anode comprises a single avalanche photodiode (AP) for detecting or an array (APA) for imaging photoelectrons. The energetic photoelectrons striking the AP or the APA serve as the AP or APA's input signal, respectively.

REFERENCES:
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patent: 4129878 (1978-12-01), Webb
patent: 4317091 (1982-02-01), Dahlberg
patent: 4383267 (1983-05-01), Webb
patent: 4403397 (1983-09-01), Bottka et al.
patent: 4458260 (1984-07-01), McIntyre
patent: 4654678 (1987-03-01), Lightstone et al.
patent: 5021854 (1991-06-01), Huth
Gelezunas et al, "Uniform Large-Area High Gain Silicon Avalanche Radiation Detectors from Transmutation Doped Silicon", Applied Physics Letters, vol. 30, No. 2, Jan. 15, 1977.

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