Devices employing internally strained asymmetric quantum wells

Details Devices employing internally strained asymmetric quantum wells Devices employing internally strained asymmetric quantum wells

1989-10-13

1990-08-28

Nelms, David C.

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

357 4, 357 30, 250213A, H01J 4014, H01L 2712

Patent

active

049527924

ABSTRACT:
Misfit strain-induced piezoelectric fields are achieved from a new class of asymmetric quantum well devices which employ a simplified strained layer semiconductor structure. In the simplified structure, at least a single intrinsic lattice-mismatched narrow bandgap layer is included in a wider bandgap p-i-n structure so that the field resulting from biaxial stress is opposed to the electric field in the diode. According to the structure chosen, the biaxial stress may be either biaxial tension or biaxial compression. In reverse bias operation, the p-i-n diode produces a characteristic "blue shift" of the quantum well absorption peaks. As a result of the induced fields and the "blue shift" property of the devices, devices exhibit good on-off contrast with relatively low applied power and exhibit reduced tolerances on the operating wavelength of incident light.

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