Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1975-09-19
1976-09-21
Edlow, Martin H.
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
357 16, 357 52, 204 56R, 204 38A, 204 35R, 204 42, 204 35N, 204 37R, 204 32S, 136 89, H01L 2714
Patent
active
039822656
ABSTRACT:
A high efficiency solar cell having n-type aluminum arsenide grown on a p-type gallium arsenide substrate and protected by a layer of anodic oxide. The aluminum arsenide is deposited by vapor phase epitaxy by reacting high purity arsine, hydrogen chloride and aluminum at approximately 1000.degree.C in an all-alumina reactor tube system. The aluminum arsenide layer is protected from deterioration by first anodizing it in pure water and phosphoric acid at pH 2.0 with a current density of 2-8 milliamperes per square centimeter at room temperature. Second, the anodic oxide so formed is annealed at about 450.degree.C for at least twenty minutes in dry nitrogen. The oxide layer also acts as an antireflective coating. A portion of the oxide layer is etched away to expose a region of the aluminum arsenide to which an electrical contact is applied. The other contact is made to the substrate.
REFERENCES:
patent: 3218205 (1965-11-01), Ruehrwein
patent: 3249473 (1966-05-01), Holonyak, Jr.
patent: 3322575 (1967-05-01), Ruehrwein
patent: 3364084 (1968-01-01), Ruehrwein
patent: 3436549 (1969-04-01), Pruett
patent: 3882000 (1975-05-01), Schwartz
patent: 3890169 (1975-06-01), Schwartz
patent: 3914465 (1975-10-01), Dyment
Huber et al., Proc. 1973 IEEE Photovoltaic Conf., 1974, pp. 100-102.
Ettenberg et al., J. Electrochem. Soc., Solid State Science, vol. 118, No. 8, Aug. 1971, pp. 1355-1358.
Bolger et al., Nature, Sept. 28, 1963, p. 1287.
Bolger et al., Journal of the Electrochem. Soc., vol. 110, Dec. 1963, p. 2640.
Bell Telephone Laboratories Incorporated
Edlow Martin H.
Hollander James F.
LandOfFree
Devices containing aluminum-V semiconductor and method for makin does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Devices containing aluminum-V semiconductor and method for makin, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Devices containing aluminum-V semiconductor and method for makin will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1417447