Stock material or miscellaneous articles – Composite – Of b – n – p – s – or metal-containing material
Patent
1989-12-12
1990-10-02
Pianalto, Bernard
Stock material or miscellaneous articles
Composite
Of b, n, p, s, or metal-containing material
427 39, 427 58, B32B 904
Patent
active
049606565
ABSTRACT:
Silicon nitride regions suitable for applications such as capping layers in integrated circuit fabrication are produced by an advantageous plasma deposition process. This process utilizes a combination of gases, including a silicon-containing gas, a nitrogen-containing gas, a fluorine-containing gas, and a hydrogen-containing gas. Silicon nitride having a low density of defect states and thus having excellent dielectric properties is produced.
REFERENCES:
patent: 4464415 (1984-08-01), Yamazaki
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A. C. Adams, "Dielectric and Polysilicon Film Deposition", VLSI Technology, S. M. Sze, ed., McGraw-Hill Book Company, New York (1983), Chapter 3, pp. 93-129.
S. Fujita, T. Ohishi, H. Toyoshima, and A. Sasaki, "Electrical Properties of Silicon Nitride Films Plasma-Deposited from SiF.sub.4, N.sub.2, and H.sub.2 Source Gases", Journal of Applied Physics, vol. 57, No. 2 (Jan. 15, 1985), pp. 426-431.
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W. G. Meyer and R. B. Fair, "Dynamic Behavior of the Buildup of Fixed Charge and Interface States During Hot-Carrier Injection in Encapsulated MOSFET's", IEEE Transactions on Electron Devices, vol. ED-30, No. 2 (Feb. 1983), pp. 96-103.
S. Fujita, H. Toyoshima, T. Ohishi, and A. Sasaki, "Plasma-Enhanced Chemical Vapor Deposition of Fluorinated Silicon Nitride", Japanese Journal of Applied Physics, Vol. 23, No. 3 (Mar. 1984), pp. L144-146.
S. Fujita, H. Toyoshima, T. Ohishi, and A. Sasaki, "Plasma Deposited Silicon Nitride Films from SiF.sub.2 as Silicon Source", Japanese Journal of Applied Physics, Vol. 23, No. 5 (May 1984), pp. 268-L270.
Chang Chorng-Ping
Flamm Daniel L.
Ibbotson Dale E.
Mucha John A.
AT&T Bell Laboratories
Books G.
Pianalto Bernard
Schneider B. S.
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