Devices and device fabrication with borosilicate glass

Details Devices and device fabrication with borosilicate glass Devices and device fabrication with borosilicate glass

1986-12-22

1989-04-04

Morgenstern, Norman

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

357 19, 357 30, 357 73, 427 38, 427 42, 437238, H01L 3300, H04N 927, B05D 512

Patent

active

048190390

ABSTRACT:
Semiconductor devices are described which are made by a process involving the use of certain types of glass layers. These glass layers have high silica content, small amounts of boron oxide and optionally small amounts of aluminum oxide. The glass layers are put down by e-beam deposition procedure using a glass target made from restructured glass. Commercial availability of such glass makes the procedure very convenient. Such glass layers are advantageously used as barrier layers in annealing procedures used when semiconductors are doped (e.g., ion implantation in semiconductors) and as encapsulating layers in finished devices.

REFERENCES:
patent: 2106744 (1938-02-01), Hood et al.
patent: 2221709 (1940-11-01), Hood et al.
patent: 3054221 (1962-02-01), Elmer et al.
patent: 4228446 (1980-10-01), Kramer
patent: 4374391 (1985-02-01), Camlibel et al.
patent: 4492717 (1985-01-01), Plishkin et al.
J. Applied Physics, vol. 37, "Dielectric Thin Films through rf Sputtering", by P. D. Davidse and L. I. Maissel, pp. 574-579, (1966).

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