Device with quantum dot layer spaced from delta doped layer

Details Device with quantum dot layer spaced from delta doped layer Device with quantum dot layer spaced from delta doped layer

2007-04-03

2007-04-03

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S014000, C257S024000, C257S025000, C438S590000

Reexamination Certificate

active

10843894

ABSTRACT:
A method of forming a semiconductor device includes the following steps: providing a plurality of semiconductor layers; providing means for coupling signals to and/or from layers of the device; providing a layer of quantum dots disposed between adjacent layers of the device; and providing an auxiliary layer disposed in one of the adjacent layers, and spaced from the layer of quantum dots, the auxiliary layer being operative to communicate carriers with the layer of quantum dots.

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