Device with detachable battery mounting

Details Device with detachable battery mounting Device with detachable battery mounting

2005-08-09

2005-08-09

Ryan, Patrick Joseph (Department: 1745)

Chemistry: electrical current producing apparatus, product, and

Cell support for removable cell

For plural cells

Reexamination Certificate

active

06926994

ABSTRACT:
A battery mounting (100) is provided for detachable placement in a device. The battery mounting (100) comprises a housing (104) for at least one battery cell (102), a clip (116) having a cammed surface (118) for cooperation with between the housing (104) and a portion of the device, a lock (130) with a-means for applying a force to the chip (116) for locking the battery mounting (100) in place in the device, and at least one power contact (138, 140) for connecting the at least one battery cell (102) to the device. The lock (138) provides a load in the engaging direction of the at least one power contact (138, 140).

REFERENCES:
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patent: 5631101 (1997-05-01), Amero, Jr.
patent: 5707249 (1998-01-01), Byrd
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patent: 5943498 (1999-08-01), Yano et al.
The American Heritage Dictionary of the English Language. 1992. Houghton Mifflin Company. Third Edition. clamp.
Hwang, Y.N., Hong, J.S., Lee, S.H., Ahn, S.J., Jeong, G.T., Koh, G.H., Kim, H.J., Jeong, W.C., Lee, S.Y., Park, J.H., Ryoo, K.C.., Horii, H., Ha, Y.H., Yi, J.H., Cho, W.Y., Kim, Y.T., Lee, K.H., Joo, S.H., Park, S.O., Jeong, U.I., Jeong, H.S. and Kim, Kinam, “Completely CMOS-Compatible Phase-Change Nonvolatile RAM Using NMOS Cell Transistors,” presented at 2003 19thIEEE Non-Volatile Semiconductor Memory Workshop, Monterey, California, Feb. 26-20, 2003.
Ha, Y.H., Yi, J.H., Horii, H., Park, J.H., Joo, S.H., Park, S.O., Chung, U-In and Moon, J.T., “An Edge Contact Type Cell for Phase Change RAM Featuring Very Low Power Consumption,” presented at IEEE 2003 Symposium on VLSI Technology, Kyoto, Japan, Jun. 12-14, 2003.
Hwang, Y.N., Hong, J.S., Lee, S.H., Ahn, S.J., Jeong, G.T., Koh, G.H., Oh, J.H., Kim, H.J., Jeong, W.C., Lee, S.Y., Park, J.H., Ryoo, K.C., Horii, H., Ha, Y.H., Yi, J.H., Cho, W.Y., Kim, Y.T., Lee, K.H., Joo, S.H., Park, S.O., Chung, U.I., Jeong, H.S. and Kim, Kinam, “Full Integration and Reliability Evaluation of Phase-change RAM Based on 0.24 mm-CMOS Technologies,” presented at IEEE 2003 Symposium on VlSI Technology, Kyoto, Japan, Jun. 12-14, 2003.
Horii, H., Yi, J.H., Park, J.H., Ha, Y.H., Baek, I.G., Park, S.O., Hwang, Y.N., Lee, S.H., Kim, Y.T., Lee, K.H., Chung, I-In and Moon, J.T., “A Novel Cell Technology Using N-doped GeSbTe Films for Phase Change RAM,” presented at IEEE 2003 Symposium on VLSI Technology, Kyoto, Japan, Jun. 12-14, 2003.

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