Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Beam leads
Reexamination Certificate
2006-05-23
2009-02-03
Clark, S. V (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Beam leads
C257S736000
Reexamination Certificate
active
07485958
ABSTRACT:
A device with a beam structure includes a substrate, an anchor and a cavity which are provided on and over the substrate, respectively, and a beam structure which is provided on the anchor and over the cavity, extends in a first direction and includes a plurality of convex portions and a plurality of concave portions, each of the convex portions having such a stress gradient as to provide a convex warp, and each of the concave portions having such a stress gradient as to provide a concave warp. The convex portions and the concave portions are alternately repeatedly arranged.
REFERENCES:
patent: 5587343 (1996-12-01), Kano et al.
patent: 5936159 (1999-08-01), Kano et al.
patent: 6567715 (2003-05-01), Sinclair et al.
patent: 6822304 (2004-11-01), Honer
patent: 2001/0045228 (2001-11-01), Takada et al.
patent: 2004/0050674 (2004-03-01), Rubel
patent: 2005/0102833 (2005-05-01), Hantschel et al.
patent: 2005/0270128 (2005-12-01), Nakanishi et al.
patent: 2005/0286110 (2005-12-01), Wen et al.
patent: 2006/0038301 (2006-02-01), Suzuki
patent: 2006/0056132 (2006-03-01), Yoshida et al.
patent: 2007/0268095 (2007-11-01), Chou
patent: 2004-170508 (2004-06-01), None
H.C. Lee et al., “Silicon Bulk Micromachined RF MEMS Switches with 3.5 Volts Operation by using Piezoelectric Actuator,” 2004 IEEE MTT-S Digest, pp. 585-588.
M.J. Kim et al., “Design, Fabrication and Characterization of Piezoelectric Multi-Layer Cantilever Microactuators for the Minimum Initial Deflection,” Transducers '99, Jun. 7-10, 1999, pp. 1758-1761.
Clark S. V
Foley & Lardner LLP
Kabushiki Kaisha Toshiba
LandOfFree
Device with beam structure, and semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Device with beam structure, and semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Device with beam structure, and semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4056365