Device using ordered semiconductor alloy

Details Device using ordered semiconductor alloy Device using ordered semiconductor alloy

1990-06-08

1991-09-17

Larkins, William D.

357 16, 357 22, 357 4, H01L 29163

Patent

active

RE0336939

ABSTRACT:
An ordered-disordered transition is observed in semiconductor alloys which enables either the ordered or disordered structure to be produced.

REFERENCES:
patent: 3626257 (1971-12-01), Esaki et al.
patent: 4205329 (1980-05-01), Dingle et al.
patent: 4348686 (1982-09-01), Esaki et al.
patent: 4797716 (1989-01-01), Chaffin
Osbourn, App. Phys. Lett., Jul. 15, 1982, pp. 172 et seq.
Thermodynamics of Solids, Wiley-Interscience Publication, Richard A. Swalin, pp. 153-159.
Constitution of Binary Alloys, McGraw-Hill Book Company, Inc., Dr. phil. Max Mansen, pp. 774-775.
Journal of Vacuum Science Technology A2, Apr.-Jun. 1984, Ge.sub.x Si.sub.1-x /Si strained-layer superlattice grown by molecular beam epitaxy; J. C. Bean et al., pp. 436-440.
Scientific American Journal, Nov. 1983, "Solid-State Super-lattices," Gottfried H. Dohler, pp. 144-151.

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