Device using ambipolar transport in SB-MOSFET and method for...

Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – To compound semiconductor

Reexamination Certificate

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C257S471000, C257S476000, C257S288000, C257SE29148, C327S376000, C327S377000

Reexamination Certificate

active

11187654

ABSTRACT:
A device using an ambipolar transport of an SB-MOSFET and a method for operating the same are provided. The SB-MOSFET includes: a silicon channel region; a source and a drain contacted on both sides of the channel region and formed of material including metal layer; and a gate formed on the channel region, with a gate dielectric layer interposed therebetween. Positive (+), 0 or negative (−) gate voltage is selectively applied to the gate, the channel becomes off-state when the gate voltage between a negative threshold voltage and a positive threshold voltage is applied, and the channel becomes a first on-state and a second on-state when the gate voltage is lower than the negative threshold voltage or higher than the positive threshold voltage. Accordingly, it is possible to implement three current states, that is, hole current, electron current, and no current. The SB-MOSFET can be applied to a multi-bit memory and/or multi-bit logic device.

REFERENCES:
patent: 6303479 (2001-10-01), Snyder
patent: 10-19980042717 (1998-10-01), None
patent: 2000-0025576 (2000-05-01), None
Ambipolar Schottky barrier silicon on insulator metal oxide semiconductor transistors, Homg-Chih et al., available online Jun. 12, 2002.
Horng-Chih Lin, Meng-Fan Wang, Chia-Yu Lu, Tiao-Yuan Huang,Ambipolar Schottky barrier silicon-on-insulator metal-oxide-semiconductor transistors, National Nano Device Laboratories, Taiwan, Apr. 16, 2002, www.sciencedirect.com.

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