Device using a metal-insulator transition

Details Device using a metal-insulator transition Device using a metal-insulator transition

2011-07-12

2011-07-12

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Semiconductor is an oxide of a metal or copper sulfide

C257S192000, C257S194000, C257S310000

Reissue Patent

active

RE042530

ABSTRACT:
A switching field effect transistor includes a substrate; a Mott-Brinkman-Rice insulator formed on the substrate, the Mott-Brinkman-Rice insulator undergoing abrupt metal-insulator transition when holes added therein; a dielectric layer formed on the Mott-Brinkman-Rice insulator, the dielectric layer adding holes into the Mott-Brinkman-Rice insulator when a predetermined voltage is applied thereto; a gate electrode formed on the dielectric layer, the gate electrode applying the predetermined voltage to the dielectric layer; a source electrode formed to be electrically connected to a first portion of the Mott-Brinkman-Rice insulator; and a drain electrode formed to be electrically connected to a second portion of the Mott-Brinkman-Rice insulator.

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Application of Gutzwiller's Variational Method to the Metal-Insulator Transition. W. F. Brinkman and T. M. Rice Bell Telephone Laboratories, Murray Hill, New Jersey 07974 Apr. 16, 1970.
Mott Transition field effect transistor by DM Newns; Applied physics letters Aug. 10, 1998 pp. 780-782.
A field effect transistor based on the Mott transition in a molecular layer by C. Zhou; Applied physics letters Feb. 3, 1997 pp. 598-600.

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