Device under test de-embedding

Details Device under test de-embedding Device under test de-embedding

2011-04-05

2011-04-05

Feliciano, Eliseo Ramos (Department: 2857)

Data processing: measuring, calibrating, or testing

Measurement system

Performance or efficiency evaluation

C324S638000, C702S117000, C702S126000, C703S013000, C703S014000, C714S733000, C714S734000

Reexamination Certificate

active

07920987

ABSTRACT:
A method of determining the intrinsic electrical characteristics of a device under test (DUT) includes determining a set of test measurements for a test structure including the device and determining test measurements for a number of de-embedding test structures. Based on the test measurements, DUT measurements are determined using both open-short and three-step de-embedding processes. The DUT measurements are combined to determine an imperfection error, which is used to adjust the calculations of a four-port de-embedding method. The adjusted calculations provide for a more accurate measurement of the parasitic elements in the test structure, thereby improving the determination of the intrinsic electrical characteristics of the device.

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Vandamme, et al., “Improved Three-Step De-Embedding Method to Accurately Account for the Influence of Pad Parasitics in Silicon On-Wafer RF Test-Structures,” IEEE Transactions on Electron Devices, vol. 48, No. 4, Apr. 2001, pp. 737-742.

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