Semiconductor device manufacturing: process – Semiconductor substrate dicing – By electromagnetic irradiation
Reexamination Certificate
2005-03-29
2005-03-29
Nguyen, Tuan H. (Department: 2813)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
By electromagnetic irradiation
C438S066000, C438S464000
Reexamination Certificate
active
06872635
ABSTRACT:
A method of selectively transferring devices arrayed on a first substrate to a second substrate on which an adhesive resin layer is previously formed is provided. The method includes steps of selectively heating the adhesive resin layer on the second substrate by laser irradiation from the back surface side of the second substrate, and curing the selectively heated portions of the adhesive resin layer, thereby adhesively bonding those to be transferred of the devices to the second substrate. At this time, portions, corresponding to the devices, of the adhesive layer are heated directly or indirectly via the devices or wiring portions by laser irradiation from the back surface side of the substrate. The heated portions of the adhesive resin layer selectively exhibit the adhesive forces. The heated portions of the adhesive layer are then cured, so that only the devices to be transferred are selectively transferred to the second substrate. As a result, only the devices to be transferred can be done so with certainty, efficiency, and accuracy without exerting adverse effect on other parts.
REFERENCES:
patent: 5206749 (1993-04-01), Zavracky et al.
patent: 5258320 (1993-11-01), Zavracky et al.
patent: 5272326 (1993-12-01), Fujita et al.
patent: 5438241 (1995-08-01), Zavracky et al.
patent: 5739800 (1998-04-01), Lebby et al.
patent: 6007664 (1999-12-01), Kuizenga et al.
patent: 6204079 (2001-03-01), Aspar et al.
patent: 6277711 (2001-08-01), Wu
patent: 6283693 (2001-09-01), Acello et al.
patent: 6559905 (2003-05-01), Akiyama
patent: 6649012 (2003-11-01), Masayuki et al.
patent: 20020115265 (2002-08-01), Iwafuchi et al.
patent: 20020171089 (2002-11-01), Okuyama et al.
patent: 0 905 673 (1999-03-01), None
patent: 10-33393 (2000-09-01), None
patent: 11-54002 (2001-11-01), None
patent: 50-13878 (1975-05-01), None
patent: 51-24534 (1976-07-01), None
patent: 56-17385 (1981-02-01), None
patent: 56-061468 (1981-05-01), None
patent: 56-061469 (1981-05-01), None
patent: 60-181778 (1985-09-01), None
patent: 60-252681 (1985-12-01), None
patent: 62-230096 (1987-10-01), None
patent: 11-68004 (1989-07-01), None
patent: 02-114196 (1990-04-01), None
patent: 21-55236 (1990-06-01), None
patent: 04-010671 (1992-01-01), None
patent: 04-247486 (1992-09-01), None
patent: 5-144878 (1993-06-01), None
patent: 52-18137 (1993-08-01), None
patent: 05-290669 (1993-11-01), None
patent: 05-315643 (1993-11-01), None
patent: 60-77282 (1994-03-01), None
patent: 6-118441 (1994-04-01), None
patent: 06-504139 (1994-05-01), None
patent: 6-504139 (1994-05-01), None
patent: 07-110660 (1995-04-01), None
patent: 07-231011 (1995-08-01), None
patent: 07-263754 (1995-10-01), None
patent: 08-078820 (1996-03-01), None
patent: 08-107293 (1996-04-01), None
patent: 08-264841 (1996-10-01), None
patent: 09-293904 (1997-11-01), None
patent: 10-070151 (1998-03-01), None
patent: 10-125733 (1998-05-01), None
patent: 10-144733 (1998-05-01), None
patent: 10-163536 (1998-06-01), None
patent: 10-173305 (1998-06-01), None
patent: 10-256694 (1998-09-01), None
patent: 10-305620 (1998-11-01), None
patent: 11-8338 (1999-01-01), None
patent: 11-26734 (1999-01-01), None
patent: 11-126037 (1999-05-01), None
patent: 11-142878 (1999-05-01), None
patent: 11-219146 (1999-08-01), None
patent: 11-274239 (1999-10-01), None
patent: 2000-89693 (2000-03-01), None
patent: 2000-150697 (2000-05-01), None
patent: 2000-200729 (2000-07-01), None
patent: 2001-7340 (2001-01-01), None
patent: 2001-51296 (2001-02-01), None
patent: WO 9505623 (1995-02-01), None
Applied Physics Letters, vol. 76, No. 22, May 29, 2000, Selective growth of InGaN quantum dot structures and their microphotoluminescence at room temperature, Tachibani et al, pp. 3212-3214.
Hayashi Kunihiko
Iwafuchi Toshiaki
Ohba Hisashi
Yanagisawa Yoshiyuki
Bell Boyd & Lloyd LLC
Nguyen Tuan H.
Pham Thanhha
Sony Corporation
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