Device transferring method

Details Device transferring method Device transferring method

2007-04-17

2007-04-17

Pham, Thanhha S. (Department: 2813)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

By electromagnetic irradiation

C438S066000, C438S464000

Reexamination Certificate

active

11079780

ABSTRACT:
A method of selectively transferring devices arrayed on a first substrate to a second substrate on which an adhesive resin layer is previously formed is provided. The method includes steps of selectively heating the adhesive resin layer on the second substrate by laser irradiation from the back surface side of the second substrate, and curing the selectively heated portions of the adhesive resin layer, thereby adhesively bonding those to be transferred of the devices to the second substrate. At this time, portions, corresponding to the devices, of the adhesive layer are heated directly or indirectly via the devices or wiring portions by laser irradiation from the back surface side of the substrate. The heated portions of the adhesive resin layer selectively exhibit the adhesive forces. The heated portions of the adhesive layer are then cured, so that only the devices to be transferred are selectively transferred to the second substrate. As a result, only the devices to be transferred can be done so with certainty, efficiency, and accuracy without exerting adverse effect on other parts.

REFERENCES:
patent: 5438241 (1995-08-01), Zavracky et al.
patent: 6872635 (2005-03-01), Hayashi et al.
patent: 2002/0171089 (2002-11-01), Okuyama et al.
patent: 2005/0158094 (2005-07-01), Hayashi et al.
patent: 2005/0158896 (2005-07-01), Hayashi et al.

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