Device substrate and method for producing device substrate

Details Device substrate and method for producing device substrate Device substrate and method for producing device substrate

2006-03-14

2006-03-14

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S090000, C117S093000, C117S094000, C117S095000, C117S104000

Reexamination Certificate

active

07011706

ABSTRACT:
A device substrate is provided having: a Si(111) substrate; a buffer layer formed by epitaxial growth on the Si(111) substrate11, and containing at least one of a rare earth metal oxide and an alkali earth metal oxide; and a semiconductor material layer formed by epitaxial growth on the buffer layer, and containing at least one of a group II–VI semiconductor material having a wurtzite structure and a group III–V semiconductor material having a wurtzite structure. The buffer layer preferably comprises a hexagonal crystal structure oriented in the (001) plane or a cubic crystal structure oriented in the (111) plane, and the semiconductor material layer preferably comprises a hexagonal crystal structure oriented in the (001) plane.

REFERENCES:
patent: 6045626 (2000-04-01), Yano et al.
patent: 6258459 (2001-07-01), Noguchi et al.
patent: 6749686 (2004-06-01), Ami et al.
patent: 11-162852 (1999-06-01), None
patent: 2001-284349 (2001-10-01), None

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