Device simulator for semiconductor device

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364578, G06F 1520

Patent

active

052893847

ABSTRACT:
It is an object of this invention to make it possible to accurately simulate a manner in which carriers are transferred in a semiconductor device. A Fermi level setting means sets a Fermi level in a sink region of carriers, such as a vertical CCD portion of a CCD, and Boltzmann distribution equation solving means solve a Boltzmann distribution equation to obtain a carrier density in this Fermi level set region. In a CCD, the manner in which carriers are transferred from a photodiode portion to a vertical CCD portion in a CCD can be simulated accurately.

REFERENCES:
patent: 5103415 (1992-04-01), Omura et al.
Ryo Dan ed., "Process Device Simulation Technique", Sangyo Tosho, 1988, pp. 1-9.
Kawazoe et al., "Application of 2D Device Simulator to Development of CCD Image Sensor", the 37th Applied Physics Association Joint Lecture Meeting Manuscripts, the 0th Separate vol., 1990, spring, pp. 1,208.
Kitamura et al., "Sensitivity Simulation of a Frame Transfer CCD Image Sensor", the 37th Applied Physics Association Joint Lecture Meeting Manuscripts, the 2nd Separate vol., 1990, spring, p. 629.

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