Device simulator and mesh generating method thereof

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364489, 364490, 364491, 364578, 395125, G06F 1750, G06T 1720

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active

056778465

ABSTRACT:
A device simulator including a boundary protection layer generation portion for generating a boundary protection layer which will not cause parasitic resistance in the vicinity of a boundary between different components of a semiconductor device whose electric characteristics is to be simulated, a mesh point generation portion for allocating a mesh point apart from the boundary protection layer by a predetermined reference distance, and a mesh generation portion for generating a triangular mesh by connecting the mesh point.

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Yixin et al., "Advanced Two Dimensional Automatic Triangular Mesh Generation for DE2D Interface Software Package", Jan. 88, IEEE Transactions on Magnetics, vol. 24, No. 1, pp. 318-321.
Selberherr, "Analysis and Simulation of Semiconductor Devices", Chapter 6: The Discretization of the Basic Semiconductor Equations, Springer-Verlag, pp. 149-201.
Rafferty et al., "Iterative Methods in Semiconductor Device Simulation", IEEE Transactions on Electron Devices, vol. ED-32, No. 10, p. 2018 Oct. 1985.
Coughran, Jr. et al., "Adaptive Grid Generation for VLSI Device Simulation", IEEE Transactions on Computer-Aided Design, vol. 10, No. 10, p. 1263 Oct. 1991.
P. Conti et al.; ".OMEGA.--An Octree-Based Mixed Element Grid Allocator for the Simulation of Complex 3-D Device Structures"; IEEE Transactions on Computer-Aided Design, vol. 10, No. 10, Oct. 1991, pp. 1231-1241.

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