Device sensitive to a movement comprising at least one...

Details Device sensitive to a movement comprising at least one... Device sensitive to a movement comprising at least one...

2007-05-16

2011-10-04

Nguyen, Ha Tran T (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Responsive to non-optical, non-electrical signal

C257S417000, C257S418000, C257S420000, C257S302000

Reexamination Certificate

active

08030690

ABSTRACT:
The invention relates to a detection device using at least one transistor (2) with a vertical channel, comprising a mechanical structure (14), free to move relative to the transistor, in a plane containing the transistor drain (10), source (8) and channel (12).

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Buschnakowski et al; “Development and Characterisation of a High Aspect Ratio Vertical Fet Sensor for Motion Detection”, Transducers, Solid-State Sensors, Actuators and Microsystems, 12th International Conference, IEEE vol. 2, Jun. 9, 2003 pp. 1391-1394.

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