Device protecting layer

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating

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257640, 257649, H01L 2934

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active

054830974

ABSTRACT:
A device protecting film having a UV transmissible SiN film, wherein the film is formed by a plasma CVD process in such a manner that a composition ratio Si/N falls within the range of 0.75 to 0.87, a Si--H bond concentration Z (cm.sup.-3) in the SiN film has a value near the value Z expressed by the following formula in accordance with a value X of Si/N:

REFERENCES:
Y. Yasuda: "Plasma CVD Technology and its Applications", Apply. Phys. vol. 50, No. 6, 1981, pp. 638-649 See Appla pp. 1 & 2.
S. Fujita et al: "Recent Research and Development on Silicon Nitride Thin Films", Appl. Phys. vol. 54, No. 12, 1985, pp. 1250-1266.
M. Rand et al: Journal of Electrochemical Society: "Solid-state Science and Technology", vol. 125, No. 1, Jan. 1978, pp. 99-101, Optical Absorption as a Control Test for Plasma Silicon Nitride Deposition.
H. J. Stein et al: J. Electrochem. Soc.: Solid-state Science and Technology vol. 126, No. 10, Oct. 1979 pp. 1750-1753, "Properties of Plasma-Deposited Silicon Nitride".
J. Robertson et al: Appl. Phys Lett. 44 (4), Feb. 15, 1984 pp. 415-416. "Gap States in Silicon Nitride".
W. Warren et al: J. Electrochem. Soc., Nol. 139, No. 3, Mar. 1992, pp. 880-889, "Paramagnetic Point Defects in Amorphous Silicon Dioxide and Amorphous Silicon Nitride Thin Films".
W. Lanford: J. Appln Phys. 49 (4), Apr. 1978, pp. 2473-2477, "The Hydrogen content of plasma-deposited silicon nitride".
E. Bustarret et al: Phusical Review B, vol. 38, No. 12, Oct. 15, 1988, pp. 8171-8184 "Configurational statistics in a-SixNyHz alloys: A quantitive bonding analysis".
A. Shinha et al: J. Electrochem. Soc: "Solid-state Science and Technology", vol. 125, No. 4, Apr. 1978, pp. 601-608, Reactive Plasma Deposited Si-N Films for MOS-LSI Passivation.

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