Device processing involving an optical interferometric thermomet

Fishing – trapping – and vermin destroying

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437 8, 156626, 20419213, 20419233, H01L 2100, H01L 2102, H01L 2130, H01L 21306

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052293033

ABSTRACT:
A method for fabricating a semiconductor device, which involves a technique for monitoring the temperature of the semiconductor substrate in which the device is formed, is disclosed. In accordance with the inventive technique, light, to which the substrate is substantially transparent, is impinged upon the substrate, and the intensity of either the reflected or transmitted light is monitored. If, for example, the intensity of the reflected light is monitored, then this intensity will be due to an interference between the light reflected from the upper surface of the semiconductor substrate and the light transmitted through the substrate and reflected upwardly from the lower surface of the substrate. If the temperature of the substrate varies, then the optical path length of the light within the substrate will vary, resulting in a change in the detected intensity. By comparing the detected intensity with intensities corresponding to known temperature variations, the temperature of the substrate is readily determined.

REFERENCES:
patent: 3988564 (1976-10-01), Garvin et al.
patent: 4408884 (1983-10-01), Kleinknecht et al.
patent: 4437761 (1984-03-01), Kroger et al.
patent: 4495221 (1985-01-01), Broadbent
patent: 4496448 (1985-01-01), Tai et al.
patent: 4717446 (1988-01-01), Nagy et al.
Saenger, Wavelength-modulated interferometric thermometry for improved substrate temperature measurement, Rev. Sci. Instrum., vol. 63, No. 8, Aug. 1992, pp. 3862-3868.
Donnelly, Infrared-laser interferometric thermometry: a nonintrusive technique for measuring semiconductor wafer temperatures, J. Vac. Sci. Technol A, vol. 8, No. 1, Jan. 1990, pp. 84-92.
Bond, Temperature measurements of glass substrates during plasma etching, J. Vac. Sci. Technol., 18(2), Mar. 1981, pp. 335-338.
Journal of Crystal Growth, 55 (1981).
Chemical Vapor Deposition for Microelectronics by A. Sherman, Noyes Data Corporation, Parkridge, N.J., 1987.
M. Born and E. Wolf in Principle of Optics (Pergamon Press, N.Y., 1980).
D. Hacman in Optik, 28, 115 (1968).
Chang and Ploog, Molecular Beam Epitaxy and Heterostructures, Martinus Nijhoff Publishers, Dordrecht, 1985.
F. Stern in Phys. Rev. A, 133, 1653 (1964).
Y. S. Touloukian, et al., Thermophysical Properties of Matter, 13, "Thermal Expansion", Plenum Press, N.Y., 1977.

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