Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2007-06-21
2009-11-10
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S374000, C257SE29018
Reexamination Certificate
active
07615840
ABSTRACT:
A trench is formed in the surface of a provided semiconductor body. An oxide is deposited in the trench and a cap is deposited on the oxide, wherein the combination of the cap and the oxide impart a mechanical stress on the semiconductor body.
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Gutmann Alois
Hampp Roland
Han Jin-Ping
Kwon O Sung
Infineon - Technologies AG
Mandala Victor A
Slater & Matsil L.L.P.
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