Device packages having a III-nitride based power...

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead

Reexamination Certificate

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Details

C257S676000, C257S706000, C257S796000, C257SE23042

Reexamination Certificate

active

07547964

ABSTRACT:
A semiconductor device package includes a die pad, a substrate disposed on the die pad, and a III-nitride based semiconductor device disposed on the substrate. The device package may also include a second semiconductor device disposed on the die pad or the substrate, which device may be electrically connected to the III-nitride based device to form a circuit.

REFERENCES:
patent: 6255722 (2001-07-01), Ewer et al.
patent: 6380569 (2002-04-01), Chang et al.
patent: 6404065 (2002-06-01), Choi
patent: 6545364 (2003-04-01), Sakamoto et al.
patent: 6597063 (2003-07-01), Shimizu et al.
patent: 6762488 (2004-07-01), Maeda et al.
patent: 6798060 (2004-09-01), Strauch
patent: 2002/0041003 (2002-04-01), Udrea et al.
patent: 2003/0162382 (2003-08-01), Aono et al.
patent: 2004/0080028 (2004-04-01), Yanagisawa
patent: 2005/0012541 (2005-01-01), Watanabe
patent: 2005/0133902 (2005-06-01), Pavier et al.
patent: 2005/0151236 (2005-07-01), Oliver et al.
International Search Report dated Aug. 30, 2007 for PCT/US06/15376.
International Search Report dated Aug. 8, 2006 for PCT/US06/15377.

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