Coherent light generators – Particular active media – Semiconductor
Patent
1989-01-11
1991-04-30
Gonzalez, Frank
Coherent light generators
Particular active media
Semiconductor
357 4, H01S 319
Patent
active
050124765
DESCRIPTION:
BRIEF SUMMARY
The invention relates to a device of semiconductor materials formed on a substrate having a parameter which is different from that of the semiconductor materials of the device.
A study of the thermal properties of diamond shows that, on the one hand, the thermal conductivity is twice that of copper and that, on the other hand, the coefficient of thermal expansion is five times less than that of copper.
This is clearly apparent from the table given below in which the characteristics of diamond, of boron nitride T-CBN (Transparent Cubic Boron Nitride) and copper are compared.
______________________________________ thermal thermal dielectric
conductivity expansion resistivity
constant
RT 140.degree. C.
RT 400.degree. C.
.OMEGA. .multidot. cm
at 1 MHZ
______________________________________
diamond
9 5 2.3 .times. 10.sup.-6 /C.
10.sup.16
5.7
T-CBN 6.0 6.5 3.7 .times. 10.sup.-6 /C.
>10.sup.11
6.5
Cu 3.9 3.9 17.0 .times. 10.sup.-6 /C.
______________________________________
Success has recently been achieved in the production of diamonds doped with boron. When the quantity of boron is larger than 100 ppm, diamond becomes conductive and, in the case of a quantity smaller than 100 ppm, it becomes semiconducting.
At the present time, synthetic diamonds are employed as supports for optoelectronic components.
However, the use of diamond or boron nitride T-CBN for implanting semiconductor components was unthinkable since the problem to be solved was a problem of lattice mismatch.
The invention consists in employing insulating or semiconducting diamond as a substrate and in fabricating the integrated circuits by employing ion implantations as is at present the practice on the Si substrate.
Furthermore, the invention consists in employing semi-insulating or conductive diamond as substrate, in forming the III-V or II-VI semiconductor materials (heterojunction, superlattices) by direct epitaxial deposition in order to fabricate optoelectronic components such as laser, photodiode, photocathode, solar cell . . . and the microwave components such as GUNN diode, IMPATT diode, FET transistor.
The invention therefore relates to a device of semiconductor materials, characterized in that it comprises: superlattice, which are deposited on the silicon layer and in which the layers located nearest the silicon layer have a first lattice parameter which is little different from that of the silicon layer and in which the most distant layers have a second lattice parameter; nearest the superlattice has a lattice parameter which is little different from that of the second lattice parameter.
The invention is also concerned with a method of construction of a device in accordance with any one of the preceding claims, characterized in that it involves the following steps: amorphous silicon on the substrate; nucleations; silicon layer; material.
The different objects and characteristics of the invention will appear in greater detail in the following description which is given by way of example with reference to the accompanying figures and in which:
FIG. 1 represents an example of construction of a device in accordance with the invention;
FIG. 2 represents an example of construction of a semiconductor laser in accordance with the invention;
FIG. 3 represents an example of construction of a distributed feedback (DFB) laser structure;
FIG. 4 represents an example of construction of a distributed-feedback power laser;
FIG. 5 represents an example of construction of a distributed-feedback laser comprising a reflecting mirror.
Diamond has excellent properties of electrical insulation and thermal conduction.
By doping diamond with boron with a dopant concentration of less than 100 ppm, a p-type semiconductor material is obtained. By carrying out doping of diamond with boron at a concentration higher than 100 ppm, the diamond becomes conductive.
The invention is therefore intended to turn to profitable account the properties of good thermal conduction of diamond in order to use this latter as a substrate in the f
REFERENCES:
patent: 4639275 (1987-01-01), Holonyak, Jr.
patent: 4727555 (1988-02-01), Burnham et al.
Blondeau Robert
Defour Martin
Krakowski Michel
Maurel Philippe
Omnes Franck
"Thomson-CSF"
Gonzalez Frank
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