Patent
1988-04-04
1990-05-15
Hille, Rolf
357 67, H01L 2348
Patent
active
049262378
ABSTRACT:
A semiconductor device, device metallization, and method are described. The device metallization, which is especially designed for submicron contact openings, includes titanium silicide to provide a low resistance contact to a device region, titanium nitride and sputtered tungsten to provide a diffusion barrier, etched back chemical vapor deposited tungsten for planarization, and aluminum or an aluminum alloy for interconnection.
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IEEE Journal of Solid-State Circuits, vol. SC-15, No. 4, Aug. 1980, Refractory Silicides of Ti and Ta for Low-Resistivity Gates and Interconnects, by Murarka et al.
Refractory Contact Stud, IBM Technical Disclosure Bulletin, vol. 29, No. 11, Apr. 1987.
S. W. Sun, et al., "Al/W/TiN.sub.x /TiSi.sub.y /Si Barrier Technology for 1.0 .mu.m Contacts", IEEE Electron Device Letters, vol. 9, No. 2, Feb. 88, pp. 71-73.
S. W. Sun, et al., "Effects of TiS.sub.x /TiN.sub.x /Al Contact Metallization Process on the Shallow Junction Related Properties", Rapid Thermal Processing of Electrical Materials, Materials Research Soc., 1987, pp. 165-170.
Lee Jen-Jiang
Sun Shih W.
Dockrey Jasper W.
Fisher John A.
Hille Rolf
Loke Steven
Motorola Inc.
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